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        語言選擇: 中文版line英文版

        半導體微納米器件模擬軟件

        • nextnano++半導體納米器件模擬軟件
        nextnano++半導體納米器件模擬軟件

        nextnano++半導體納米器件模擬軟件

        • Version: nextnano++
        • 1D/2D/3D 納米器件
        • 圖形化軟件平臺
        • 豐富的材料庫和模擬樣例
        • 產品描述:nextnano++是專門用于量子器件的模擬軟件,可用于解薛定諤泊松電流,模擬量子阱,量子線,量子點等。
        • 在線訂購

        nextnano++ 可運行于可運行于視化軟件界面nextnanomat,nextnanomat 一款可對輸入文件(ASCII, XML...)圖形化,組織管理和提交模擬任務,對輸出文件圖形化的軟件平臺,可并行同時處理多任務(計算機多核要求滿足的情況下)。

        nextnanomat可以運行以下軟件:

        nextnano3

        nextnano++

        nextnano.MSB

        nextnano.QCL

        他也可以用于讀取各種TCAD或科研軟件,可以將二進制數據轉化成可以化的1D,2D和3D結果。這款軟件平臺的開發目的就是為了能夠更快的展示模擬結果。


        nextnano++軟件特點:

        - 包含 IV 族材料 (Si, Ge, SiGe) 和所有III-V族材料,以及他們三元或四元化合物材料,豐富的材料庫信息

        - 閃鋅礦和纖鋅礦結構的氮化物材料;

        - 可模擬任意幾何結構的器件 (1D, 2D and 3D)

        - 量子機理電子器件,基于 8-band k.p 模型

        - 可模擬應變,壓電和熱釋電效應

        - 生長方向沿 [001], [011], [111], [211]的材料,簡而言之,可模擬各種晶格取向

        - 平衡和非平衡體系, 計算近平衡電流(半經典l)

        - 可模擬磁場

        - 包含豐富的模擬樣例,用戶可輕松套用


        部分應用結果:


        應用教程樣例:

        1D SiGe

        1D doped Semiconductors

        1D Tight-binding bond structure

        1D Tight-binding graphene

        1D graphene (density)

        1D Poisson

        1D Triangular well

        1D Parabolic QW

        1D Double Quantum Well

        1D DOS in a QW

        1D LDOS

        1D Quantum Confined Stark Effect

        1D Exciton in QW

        1D Schottky barrier

        1D Schr?dinger-Poisson

        1D pn-junction

        1D Transmission (NEGF)

        1D QW (NEGF)

        1D RTD (NEGF)

        1D inverted HEMT

        1D voltage sweep

        1D piezo

        1D piezo [111]

        1D HEMT

        1D AlAs QW crossover I

        1D AlAs QW crossover II

        1D QW k.p dispersion

        1D deformation potentials

        1D AlGaInP on GaAs

        1D strain

        1D strained substrate

        1D wurtzite

        1D AlGaN/GaN FET

        1D bulk k.p dispersion in GaAs

        1D bulk k.p dispersion in GaN

        1D bulk k.p dispersion in II-VI

        1D GaN/AlGaN QW dispersion

        1D p-Si/SiO2/poly-Si/Gate

        1D C-V curve of a MIS

        1D Si/SiGe MODQW

        1D strained silicon

        1D Si inversion layer

        1D strained Si MOS

        1D Interband Transitions

        1D QW optical absorption

        1D QCL (simple)

        1D Quantum Cascade Laser

        1D Intraband Transitions

        1D InGaAs MQWs

        1D Scattering time

        1D SL minibands

        1D InAs/InGaSb SL (type-II)

        1D InAs/GaSb BGQW (type-II)

        1D full-band density bulk

        1D full-band density SL

        1D single-band vs. k.p

        2D single-band vs. k.p

        1D resistance in Si

        1D nin Si resistor

        1D Mobility in 2DEGs

        1D Tandem solar cell

        BIO-1D Gouy-Chapman

        BIO-1D PMF

        BIO-1D GaN/AlGaN electrolyte

        BIO-1D Si/SiO2 electrolyte

        BIO-1D Protein sensor

        2D Quantum corral

        2D Core-Shell nanowire

        2D GaN nanowire

        2D n / nin Si

        2D DG MOSFET

        2D DG MOSFET (QM)

        2D TG MOSFET

        2D QWR magnetic

        2D T-shaped QWR

        2D T-shaped strained QWR

        2D Exciton in QWR

        2D Landau levels

        2D Fock-Darwin states

        2D Fock-Darwin (ellipse)

        2D coupled QWRs in magnetic field

        2D The CBR method (Transmission)

        3D cubic QD

        3D artificial atom

        3D artificial QD crystal

        3D IB solar cell

        3D pyramidal QD

        3D hexagonal GaN QD (wurtzite)

        3D QD molecule

        3D exciton/biexciton in cubic QD

        3D Nanocrystal

        3D CEO QDs

        3D SET

        3D QD 6-band k.p

        3D strain of GaN nanowire

        3D CBR nanowire (Transmission)

        Input file generator

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